X-ray spectrometry investigation of electrical isolation in GaN

X-ray spectrometry investigation of electrical isolation in GaN

Determining the Content of Silicon Dioxide in Bauxites Using X-Ray Fluorescence Spectrometry

The X-ray fluorescence spectrometry and the MA.BM.006 reference spectrophotometric methods were used to determine the content of SiO2 (%) in bauxites from different deposits. The treatment of samples prior to the analysis involved the following steps: annealing, melting using the borax method,  and the formation of beads. Certified reference bauxite samples were used for the cali...

X-Ray Diffraction Analysis of GaN/InGaN

Electrical isolation of GaN by MeV ion irradiation

Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy

The surface polarization of Ga-face gallium nitride (GaN) (2 nm)/AlGaN (22 nm)/GaN channel (150 nm)/buffer/Si with Al2O3 capping layer is investigated by angle-resolved X-ray photoelectron spectroscopy (ARXPS). It is found that the energy band varies from upward bending to downward bending in the interface region, which is believed to be corresponding to the polarization variation. An interfaci...